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APTM08TAM04PG
Triple phase leg MOSFET Power Module
VBUS1 VBUS2 VBUS3
VDSS = 75V RDSon = 4.2m max @ Tj = 25C ID = 120A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
G5
S1 U
S3 V
S5 W
G2
G4
G6
S2 0/VBUS1
S4 0/VBUS2
S6 0/VBUS3
Features * Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge * RoHS Compliant Max ratings 75 120 90 250 30 4.5 138 75 50 1500 Unit V A V m W A mJ
July, 2006 1-7 APTM08TAM04P G- Rev 1
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 S1 S2 G2 0/VBUS 2
G3 S3 S4 G4 0/VBUS 3
G5 S5 S6 G6
U
V
W
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM08TAM04PG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 75V VGS = 0V,VDS = 60V
Typ
Tj = 25C Tj = 125C 4.2 2
VGS = 10V, ID = 60A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 100 250 4.5 4 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 60V ID =120A Inductive switching @ 125C VGS = 15V VBus = 40V ID = 120A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 40V ID = 120A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 40V ID = 120A, R G = 5
Min
Typ 4530 1080 450 153 25 82 35 60 100 65 290 317 319 336
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 120A IS = - 120A VR = 40V diS/dt = 100A/s Tj = 25C Tj = 25C 100 300
Max 120 90 1.3 6 200
Unit A V V/ns ns nC
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2-7
APTM08TAM04P G- Rev 1
July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 120A di/dt 700A/s VR VDSS Tj 150C
APTM08TAM04PG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3
Typ
Max 0.9 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTM08TAM04P G- Rev 1
July, 2006
APTM08TAM04PG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 Single Pulse 0.1 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
V GS=10V
Thermal Impedance (C/W)
10
350 300 ID, Drain Current (A) 250 200 150 100 50 0
Transfert Characteristics 200 ID, Drain Current (A) 160 120 80
T J=25C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6V 5.5V
40 0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 60A
1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150
July, 2006 4-7 APTM08TAM04P G- Rev 1
1.1 1
VGS =10V
VGS=20V
0.9 0.8 0 50 100 150 200 250 ID, Drain Current (A)
TC, Case Temperature (C)
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APTM08TAM04PG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 60A
100s
100
1ms
10
Single pulse TJ=150C TC=25C 1 10 100 VDS, Drain to Source Voltage (V)
1
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC)
July, 2006
V DS =60V ID=120A T J=25C V DS =15V
10000
Ciss
1000
Coss Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTM08TAM04P G- Rev 1
APTM08TAM04PG
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 25 50 75 100 125 150 175 200 ID, Drain Current (A)
VDS=40V RG=5 T J=125C L=100H
Rise and Fall times vs Current 120
V DS =40V RG =5 T J=125C L=100H
t d(off) tr and t f (ns)
100 80 60 40 20 0 25
tf tr
td(on)
50
75 100 125 150 175 200 ID, Drain Current (A)
Switching Energy vs Current 0.75 Eoff Switching Energy (mJ)
V DS =40V RG =5 T J=125C L=100H
Switching Energy vs Gate Resistance 1.5
VDS=40V ID=120A TJ=125C L=100H
Eon and Eoff (mJ)
0.5
1
Eoff
Eon 0.25 Eon
0.5
Eon
0 25 50 75 100 125 150 175 200 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 20 40 60 80 100 120 I D, Drain Current (A)
V DS=40V D=50% R G=5 T J=125C T C=75C ZCS ZVS
0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
100
TJ=150C
TJ=25C
10
Hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM08TAM04P G- Rev 1
APTM08TAM04PG
www.microsemi.com
7-7
APTM08TAM04P G- Rev 1
July, 2006

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